? semiconductor components industries, llc, 2004 january, 2004 ? rev. 4 1 publication order number: nsbc114edxv6/d nsbc114edxv6t1, nsbc114edxv6t5 preferred devices dual bias resistor transistors npn silicon surface mount transistors with monolithic bias resistor network the brt (bias resistor transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base?emitter resistor. these digital transistors are designed to replace a single device and its external resistor bias network. the brt eliminates these individual components by integrating them into a single device. in the nsbc114edxv6t1 series, two brt devices are housed in the sot?563 package which is ideal for low power surface mount applications where board space is at a premium. ? simplifies circuit design ? reduces board space ? reduces component count ? lead?free solder plating maximum ratings (t a = 25 c unless otherwise noted, common for q 1 and q 2 ) rating symbol value unit collector-base voltage v cbo 50 vdc collector-emitter voltage v ceo 50 vdc collector current i c 100 madc thermal characteristics characteristic (one junction heated) symbol max unit total device dissipation t a = 25 c derate above 25 c p d 357 (note 1) 2.9 (note 1) mw mw/ c thermal resistance ? junction-to-ambient r ja 350 (note 1) c/w characteristic (both junctions heated) symbol max unit total device dissipation t a = 25 c derate above 25 c p d 500 (note 1) 4.0 (note 1) mw mw/ c thermal resistance ? junction-to-ambient r ja 250 (note 1) c/w junction and storage temperature range t j , t stg ?55 to +150 c 1. fr?4 @ minimum pad nsbc114edxv6t1 preferred devices are recommended choices for future use and best overall value. device marking information see specific marking information in the device marking table on page 2 of this data sheet. q 1 r 1 r 2 r 2 r 1 q 2 (1) (2) (3) (4) (5) (6) sot?563 case 463a plastic 1 2 3 6 5 4 xx = specific device code (see table on following page) d = date code marking diagram xx d http://onsemi.com device package shipping ordering information nsbc114edxv6t1 sot?563 4 mm pitch 4000/tape & reel nsbc114edxv6t5 sot?563 2 mm pitch 8000/tape & reel
nsbc114edxv6t1, nsbc114edxv6t5 http://onsemi.com 2 device marking and resistor values device package marking r1 (k ) r2 (k ) nsbc114edxv6t1 sot?563 7a 10 10 nsbc124edxv6t1 sot?563 7b 22 22 nsbc144edxv6t1 sot?563 7c 47 47 nsbc114ydxv6t1 sot?563 7d 10 47 nsbc114tdxv6t1 (note 2) sot?563 7e 10 nsbc143tdxv6t1 (notes 2) sot?563 7f 4.7 nsbc113edxv6t1 (note 2) sot?563 7g 1.0 1.0 nsbc123edxv6t1 (notes 2) sot?563 7h 2.2 2.2 nsbc143edxv6t1 (notes 2) sot?563 7j 4.7 4.7 nsbc143zdxv6t1 (notes 2) sot?563 7k 4.7 47 nsbc124xdxv6t1 (notes 2) sot?563 7l 22 47 nsbc123jdxv6t1 (note 2) sot?563 7m 2.2 47 nsbc115edxv6t1 (notes 2) sot?563 7n 100 100 nsbc144wdxv6t1 (notes 2) sot?563 7p 47 22 2. new resistor combinations. updated curves to follow in subsequent data sheets. electrical characteristics (t a = 25 c unless otherwise noted, common for q 1 and q 2 ) characteristic symbol min typ max unit off characteristics collector-base cutoff current (v cb = 50 v, i e = 0) i cbo ? ? 100 nadc collector-emitter cutoff current (v ce = 50 v, i b = 0) i ceo ? ? 500 nadc emitter-base cutoff current nsbc114edxv6t1 (v eb = 6.0 v, i c = 0) nsbc124edxv6t1 nsbc144edxv6t1 nsbc114ydxv6t1 nsbc114tdxv6t1 nsbc143tdxv6t1 nsbc113edxv6t1 nsbc123edxv6t1 nsbc143edxv6t1 nsbc143zdxv6t1 nsbc124xdxv6t1 nsbc123jdxv6t1 nsbc115edxv6t1 nsbc144wdxv6t1 i ebo ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 0.05 0.13 madc collector-base breakdown voltage (i c = 10 a, i e = 0) v (br)cbo 50 ? ? vdc collector-emitter breakdown voltage (note 3) (i c = 2.0 ma, i b = 0) v (br)ceo 50 ? ? vdc 3. pulse test: pulse width < 300 s, duty cycle < 2.0%
nsbc114edxv6t1, nsbc114edxv6t5 http://onsemi.com 3 electrical characteristics (t a = 25 c unless otherwise noted, common for q 1 and q 2 ) (continued) characteristic symbol min typ max unit on characteristics (note 4) dc current gain nsbc114edxv6t1 (v ce = 10 v, i c = 5.0 ma) nsbc124edxv6t1 nsbc144edxv6t1 nsbc114ydxv6t1 nsbc114tdxv6t1 nsbc143tdxv6t1 nsbc113edxv6t1 nsbc123edxv6t1 nsbc143edxv6t1 nsbc143zdxv6t1 nsbc124xdxv6t1 nsbc123jdxv6t1 nsbc115edxv6t1 nsbc144wdxv6t1 h fe 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 60 100 140 140 350 350 5.0 15 30 200 150 140 150 140 ? ? ? ? ? ? ? ? ? ? ? ? ? ? collector-emitter saturation voltage (i c = 10 ma, i b = 0.3 ma) (i c = 10 ma, i b = 5 ma) nsbc113edxv6t1/nsbc123edxv6t1 (i c = 10 ma, i b = 1 ma) nsbc114tdxv6t1/nsbc143tdxv6t1 nsbc143edxv6t1/nsbc143zdxv6t1/nsbc124xdxv6t1 v ce(sat) ? ? 0.25 vdc output voltage (on) (v cc = 5.0 v, v b = 2.5 v, r l = 1.0 k ) nsbc114edxv6t1 nsbc124edxv6t1 nsbc114ydxv6t1 nsbc114tdxv6t1 nsbc143tdxv6t1 nsbc113edxv6t1 nsbc123edxv6t1 nsbc143edxv6t1 nsbc143zdxv6t1 nsbc124xdxv6t1 nsbc123jdxv6t1 (v cc = 5.0 v, v b = 3.5 v, r l = 1.0 k ) nsbc144edxv6t1 (v cc = 5.0 v, v b = 5.5 v, r l = 1.0 k ) nsbc115edxv6t1 (v cc = 5.0 v, v b = 4.0 v, r l = 1.0 k ) nsbc144wdxv6t1 v ol ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 vdc output voltage (off) (v cc = 5.0 v, v b = 0.5 v, r l = 1.0 k ) (v cc = 5.0 v, v b = 0.050 v, r l = 1.0 k ) nsbc113edxv6t1 (v cc = 5.0 v, v b = 0.25 v, r l = 1.0 k ) nsbc114tdxv6t1 nsbc143tdxv6t1 nsbc143zdxv6t1 v oh 4.9 ? ? vdc 4. pulse test: pulse width < 300 s, duty cycle < 2.0%
nsbc114edxv6t1, nsbc114edxv6t5 http://onsemi.com 4 electrical characteristics (t a = 25 c unless otherwise noted, common for q 1 and q 2 ) (continued) characteristic symbol min typ max unit on characteristics (note 5) (continued) input resistor nsbc114edxv6t1 nsbc124edxv6t1 nsbc144edxv6t1 nsbc114ydxv6t1 nsbc114tdxv6t1 nsbc143tdxv6t1 nsbc113edxv6t1 nsbc123edxv6t1 nsbc143edxv6t1 nsbc143zdxv6t1 nsbc124xdxv6t1 nsbc123jdxv6t1 nsbc115edxv6t1 nsbc144wdxv6t1 r1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 k resistor ratio nsbc114edxv6t1/nsbc124edxv6t1/ nsbc144edxv6t1/nsbc115edxv6t1 nsbc114ydxv6t1 nsbc114tdxv6t1/nsbc143tdxv6t1 nsbc113edxv6t1/nsbc123edxv6t1/nsbc143edxv6t1 nsbc143zdxv6t1 nsbc124xdxv6t1 nsbc123jdxv6t1 nsbc144wdxv6t1 r1/r2 0.8 0.17 ? 0.8 0.055 0.38 0.038 1.7 1.0 0.21 ? 1.0 0.1 0.47 0.047 2.1 1.2 0.25 ? 1.2 0.185 0.56 0.056 2.6 5. pulse test: pulse width < 300 s, duty cycle < 2.0% figure 1. derating curve 300 200 150 100 50 0 ?50 0 50 100 150 t a , ambient temperature ( c) r ja = 833 c/w 250 p d , power dissipation (mw)
nsbc114edxv6t1, nsbc114edxv6t5 http://onsemi.com 5 typical electrical characteristics e nsbc114edxv6t1 v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 2. v ce(sat) versus i c 10 02030 i c , collector current (ma) 10 1 0.1 t a =-25 c 75 c 25 c 40 50 figure 3. dc current gain figure 4. output capacitance 1 0.1 0.01 0.001 020 40 50 i c , collector current (ma) v ce(sat) , maximum collector voltage (volts) 1000 100 10 1 10 100 i c , collector current (ma) t a =75 c 25 c -25 c t a =-25 c 25 c figure 5. output current versus input voltage 75 c 25 c t a =-25 c 100 10 1 0.1 0.01 0.001 01 234 v in , input voltage (volts) 56 78 910 figure 6. input voltage versus output current 50 010203040 4 3 1 2 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) 75 c v ce = 10 v f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10
nsbc114edxv6t1, nsbc114edxv6t5 http://onsemi.com 6 typical electrical characteristics e nsbc124edxv6t1 v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 7. v ce(sat) versus i c figure 8. dc current gain figure 9. output capacitance figure 10. output current versus input voltage 1000 10 i c , collector current (ma) t a =75 c 25 c -25 c 100 10 1 100 75 c 25 c 100 0 v in , input voltage (volts) 10 1 0.1 0.01 0.001 246810 t a =-25 c 0 i c , collector current (ma) 100 t a =-25 c 75 c 10 1 0.1 10 20 30 40 50 25 c figure 11. input voltage versus output current 0.001 v ce(sat) , maximum collector voltage (volts ) t a =-25 c 75 c 25 c 0.01 0.1 1 40 i c , collector current (ma) 0 20 50 50 0 10 203040 4 3 2 1 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) i c /i b = 10 v ce = 10 v f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v
nsbc114edxv6t1, nsbc114edxv6t5 http://onsemi.com 7 typical electrical characteristics e nsbc144edxv6t1 v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 12. v ce(sat) versus i c 0246810 100 10 1 0.1 0.01 0.001 v in , input voltage (volts) t a =-25 c 75 c 25 c figure 13. dc current gain figure 14. output capacitance 100 10 1 0.1 010 203040 50 i c , collector current (ma) figure 15. output current versus input voltage 1000 10 i c , collector current (ma) t a =75 c 25 c -25 c 100 10 1 100 25 c 75 c 50 010203040 1 0.8 0.6 0.4 0.2 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) figure 16. input voltage versus output current 0 20 40 50 10 1 0.1 0.01 i c , collector current (ma) 25 c 75 c v ce(sat) , maximum collector voltage (volts ) v ce = 10 v f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 t a =-25 c t a =-25 c
nsbc114edxv6t1, nsbc114edxv6t5 http://onsemi.com 8 typical electrical characteristics e nsbc114ydxv6t1 10 1 0.1 01020304050 100 10 1 0246810 4 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8101520253035404550 v r , reverse bias voltage (volts) v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 17. v ce(sat) versus i c i c , collector current (ma) 020406080 v ce(sat) , maximum collector voltage (volts) figure 18. dc current gain 1 10 100 i c , collector current (ma) figure 19. output capacitance figure 20. output current versus input voltage v in , input voltage (volts) c ob , capacitance (pf) figure 21. input voltage versus output current i c , collector current (ma) 1 0.1 0.01 0.001 -25 c 25 c t a =75 c v ce = 10 300 250 200 150 100 50 0 2468 1520405060708090 f = 1 mhz l e = 0 v t a = 25 c 25 c i c /i b = 10 t a =-25 c t a =75 c 25 c -25 c v o = 0.2 v t a =-25 c 75 c v o = 5 v 25 c 75 c
nsbc114edxv6t1, nsbc114edxv6t5 http://onsemi.com 9 package dimensions sot?563, 6 lead case 463a?01 issue o g m 0.08 (0.003) x d 6 5 pl c j ?x? ?y? notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. dim a min max min max inches 1.50 1.70 0.059 0.067 millimeters b 1.10 1.30 0.043 0.051 c 0.50 0.60 0.020 0.024 d 0.17 0.27 0.007 0.011 g 0.50 bsc 0.020 bsc j 0.08 0.18 0.003 0.007 k s style 1: pin 1. emitter 1 2. base 1 3. collector 2 4. emitter 2 5. base 2 6. collector 1 a b y 12 3 4 5 s k style 2: pin 1. emitter 1 2. emitter2 3. base 2 4. collector 2 5. base 1 6. collector 1 0.004 0.012 0.059 0.067 0.10 0.30 1.50 1.70 6 style 3: pin 1. cathode 1 2. cathode 1 3. anode/anode 2 4. cathode 2 5. cathode 2 6. anode/anode 1 style 4: pin 1. collector 2. collector 3. base 4. emitter 5. collector 6. collector 1.35 0.0531 0.5 0.0197 mm inches scale 20:1 0.5 0.0197 1.0 0.0394 0.45 0.0177 0.3 0.0118 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint*
nsbc114edxv6t1, nsbc114edxv6t5 http://onsemi.com 10 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 nsbc114edxv6/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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